Electrical transport properties of CoSi2and Co(SixGe1−x)2films formed by different methods

The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co‐evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3‐μΩ‐cm and room‐temperature (RT) resistivity of 15 μΩ cm. The co‐evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.