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Emerging Memory Modeling Challenges (Invited Paper)

Authors :
Aurelio Giancarlo Mauri
Andrea Ghetti
Haitao Liu
Augusto Benvenuti
Chandra Mouli
Source :
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

Emerging Memory (EM) is a broad class of memory devices leveraging a wide spectrum of physical phenomena and/or material properties, that go beyond the charge storage concept of more conventional NAND and DRAM technologies. Availability of physical models and simulation tools to understand their behavior, predict performance, engineer materials and cell architecture would be extremely useful for their successful development. However, such tools are not always available because of the diversity and complexity of the physical mechanisms. This paper would like to review the main trends of the on-going modeling and simulation activities in the field of EM, trying to point out what are the needs and challenges for the future.

Details

Database :
OpenAIRE
Journal :
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Accession number :
edsair.doi...........08c5113cf38be763990f787c36b53467
Full Text :
https://doi.org/10.1109/sispad.2018.8551635