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Emerging Memory Modeling Challenges (Invited Paper)
- Source :
- 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
- Publication Year :
- 2018
- Publisher :
- IEEE, 2018.
-
Abstract
- Emerging Memory (EM) is a broad class of memory devices leveraging a wide spectrum of physical phenomena and/or material properties, that go beyond the charge storage concept of more conventional NAND and DRAM technologies. Availability of physical models and simulation tools to understand their behavior, predict performance, engineer materials and cell architecture would be extremely useful for their successful development. However, such tools are not always available because of the diversity and complexity of the physical mechanisms. This paper would like to review the main trends of the on-going modeling and simulation activities in the field of EM, trying to point out what are the needs and challenges for the future.
- Subjects :
- 010302 applied physics
Class (computer programming)
Point (typography)
Computer science
NAND gate
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Field (computer science)
Modeling and simulation
0103 physical sciences
Systems engineering
Memory modeling
Architecture
0210 nano-technology
Dram
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
- Accession number :
- edsair.doi...........08c5113cf38be763990f787c36b53467
- Full Text :
- https://doi.org/10.1109/sispad.2018.8551635