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Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy
- Source :
- Applied Physics Letters. 52:39-41
- Publication Year :
- 1988
- Publisher :
- AIP Publishing, 1988.
-
Abstract
- Device‐quality Hg1−xCdxTe (0.26
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 52
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........085c434d8c2b6a132c7aa9695975ebe3
- Full Text :
- https://doi.org/10.1063/1.99310