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Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
- Publication Year :
- 2013
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi...........0803f943960a16e2de79107310a85c25
- Full Text :
- https://doi.org/10.13140/2.1.2917.1845