Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition

Authors :: R. Higashi
M. Furuta
D. Koretomo
Source :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Publication Year :: 2018
Publisher :: The Japan Society of Applied Physics, 2018.

Subjects :: Materials science
Thin-film transistor
business.industry
Optoelectronics
Channel (broadcasting)
Composition (combinatorics)
business

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........07f654b16184cf4f753de88736d8fa1f

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