Large area deposition of Al2O3 thin films with molecular beams in high vacuum

Novel approaches to achieve uniform deposition, in particular for dielectric oxides, are highly desirable in the fields of electronics and optics. We succeeded to deposit thin films of alumina (Al2O3) with high uniformity on 150 mm diameter Si wafers. We use thermal decomposition in oxygen atmosphere of Aluminum isopropoxide, under molecular flow regime, in a High Vacuum Chemical Vapor Deposition (HV–CVD) reactor. © 2006 Elsevier B.V. All rights reserved.