Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers

Thermodynamical calculations on tetramethylsilane (TMS) pyrolysis were performed in order to study the evolution of ethylene and acetylene partial pressures as a function of the experimental conditions. The different preferential orientations of the deposited SiC films are correlated with the variation of the partial pressure of these byproducts.