Plasma‐assisted electroepitaxy of GaN layers

We have studied the growth of GaN layers by plasma-assisted electroepitaxy (PAEE). We have used an RF-plasma source to produce high concentrations of N species in the Ga melt and a high DC electric current to transfer the N species from the Ga surface to the growth interface. We have achieved continuous GaN layers by PAEE at growth temperatures as low as ∼650oC. We have also investigated PAEE growth of GaN layers on GaN nanocolumn templates. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)