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Infrared Interlayer Exciton Emission in MoS2/WSe2 Heterostructures
- Source :
- Physical Review Letters. 123
- Publication Year :
- 2019
- Publisher :
- American Physical Society (APS), 2019.
-
Abstract
- We report light emission around 1 eV (1240 nm) from heterostructures of MoS_{2} and WSe_{2} transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our findings gain access to the interlayer physics of the intrinsically incommensurate MoS_{2}/WSe_{2} heterostructure, including moire and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.
- Subjects :
- Silicon photonics
Materials science
Condensed matter physics
Infrared
Exciton
General Physics and Astronomy
Heterojunction
Electronic structure
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
01 natural sciences
Transition metal dichalcogenide monolayers
Condensed Matter::Materials Science
Dipole
0103 physical sciences
Light emission
010306 general physics
Subjects
Details
- ISSN :
- 10797114 and 00319007
- Volume :
- 123
- Database :
- OpenAIRE
- Journal :
- Physical Review Letters
- Accession number :
- edsair.doi...........072caf700b69164e6423e150a44f314c