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Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits
- Source :
- 2014 IEEE 64th Electronic Components and Technology Conference (ECTC).
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO 2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.
Details
- Database :
- OpenAIRE
- Journal :
- 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)
- Accession number :
- edsair.doi...........070c2ad6aec07dd8edfffb9b3e9fb1be