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Radiation-induced defect formation in chalcogenide glasses
- Source :
- Journal of Non-Crystalline Solids. :268-272
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- The modified model of native and radiation-induced microvoid-type positron traps in vitreous chalcogenide semiconductors is developed to explain compositional features of positron annihilation lifetime measurements in stoichiometric As2S3–GeS2 and non-stoichiometric As2S3–Ge2S3 chalcogenide glasses before and after γ-irradiation.
- Subjects :
- Chemistry
Chalcogenide
business.industry
Radiochemistry
Physics::Optics
Chalcogenide glass
Radiation induced
Condensed Matter Physics
Condensed Matter::Disordered Systems and Neural Networks
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
chemistry.chemical_compound
Positron
Semiconductor
Materials Chemistry
Ceramics and Composites
Physical chemistry
business
Stoichiometry
Positron annihilation
Subjects
Details
- ISSN :
- 00223093
- Database :
- OpenAIRE
- Journal :
- Journal of Non-Crystalline Solids
- Accession number :
- edsair.doi...........06f3cf6dbf7aec4c2c605af205c332ab
- Full Text :
- https://doi.org/10.1016/s0022-3093(03)00406-x