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On the nature of the carriers in ferromagnetic FeSe

Authors :
J. Y. Zhang
Yegang Lu
Chunlei Yang
Xiaojun Wu
Chongxin Shan
Z.Z. Zhang
D.X. Zhao
H. J. Liu
Bin Yao
Bo-Tao Li
D.Z. Shen
Kewei Liu
Xin Fan
B. S. Li
Source :
Applied Physics Letters. 90:112105
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

The optical and electrical properties of FeSe thin films are studied by both optical absorption and Hall measurements, which suggest that ferromagnetic FeSe is a metal instead of a semiconductor. No absorption gap is observed in the whole spectrum range from far infrared to ultraviolet. Temperature dependent transport measurement indicates that FeSe has a resistivity about 10−3Ωcm. It is also found that there is a transition from n-type conductivity at low temperatures to p-type conductivity at higher temperatures in FeSe, which is attributed to the two-carrier transport nature and the thermal activation of localized carriers in the thin film.

Details

ISSN :
10773118 and 00036951
Volume :
90
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........06c5df45f5a125bcba972b935b7791ba