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Influence of Gate-to-Source Tunneling Current on Hot-Carrier Reliability Testing in MOSFETs with Ultra-Thin Gate Oxide
- Source :
- Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
- Publication Year :
- 2002
- Publisher :
- The Japan Society of Applied Physics, 2002.
Details
- Database :
- OpenAIRE
- Journal :
- Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials
- Accession number :
- edsair.doi...........06b7e65936497a89c9211d0fe71c1d69
- Full Text :
- https://doi.org/10.7567/ssdm.2002.p2-4