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GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
- Source :
- Applied Physics Letters. 105:043105
- Publication Year :
- 2014
- Publisher :
- AIP Publishing, 2014.
-
Abstract
- The application of a GaAsSb/GaAsN short-period superlattice capping layer (CL) on InAs/GaAs quantum dots (QDs) is shown to be an option for providing improved luminescence properties to this system. Separating both GaAsSb and GaAsN ternaries during the growth in 2 monolayer-thick phases solves the GaAsSbN immiscibility-related problems. Strong fluctuations in the CL composition and strain field as well as in the QD size distribution are significantly reduced, and a more regular CL interface is also obtained. Room-temperature (RT) photoluminescence (PL) is obtained for overall N contents as high as 3%, yielding PL peak wavelengths beyond 1.4 μm in samples with a type-II band alignment. High external quantum efficiency electroluminescence and photocurrent from the QD ground state are also demonstrated at RT in a single QD-layer p-i-n device. Thus, it becomes possible to combine and transfer the complementary benefits of Sb- and N-containing GaAs alloys to InAs QD-based optoelectronics.
- Subjects :
- Photocurrent
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
Superlattice
Wide-bandgap semiconductor
Electroluminescence
Gallium arsenide
chemistry.chemical_compound
chemistry
Quantum dot
Optoelectronics
Quantum efficiency
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 105
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........061f2f5b36c3585c30770d3237360724
- Full Text :
- https://doi.org/10.1063/1.4891557