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226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
- Source :
- Applied Physics Letters. 113:011111
- Publication Year :
- 2018
- Publisher :
- AIP Publishing, 2018.
-
Abstract
- Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the reflective layer are demonstrated. In addition to the description of the hole transport mechanism that allows hole injection from p-type Si into the wide bandgap device, the details of the LED structure which take advantage of the p-type Si layer as a reflective layer to enhance light extraction efficiency (LEE) are elaborated. Fabricated LEDs were characterized both electrically and optically. Owing to the efficient hole injection and enhanced LEE using the p-type Si nanomembranes (NMs), an optical output power of 225 μW was observed at 20 mA continuous current operation (equivalent current density of 15 A/cm2) without external thermal management. The corresponding external quantum efficiency is 0.2%, higher than any UV LEDs with emission wavelength below 230 nm in the continuous current drive mode. The study demonstrates that adopting p-type Si NMs as both the hole injector and the reflective mirror can enable high-performance UV LEDs with emission wavelengths, output power levels, and efficiencies that were previously inaccessible using conventional p-i-n structures.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Band gap
Nanophotonics
Wide-bandgap semiconductor
02 engineering and technology
021001 nanoscience & nanotechnology
medicine.disease_cause
01 natural sciences
law.invention
law
0103 physical sciences
medicine
Optoelectronics
Quantum efficiency
0210 nano-technology
business
Current density
Ultraviolet
Light-emitting diode
Diode
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 113
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........05e5c76add0c3bdc5510411b543243b8