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Threshold voltage shift-proof circular oxide thin film transistor with top and bottom gates for high bending stability

Authors :
Je Hwang Ryu
Seoungbum Lim
Mallory Mativenga
Farjana Haque
Source :
Japanese Journal of Applied Physics. 59:104001
Publication Year :
2020
Publisher :
IOP Publishing, 2020.

Subjects

Subjects :
Materials science
Oxide semiconductor
Physics and Astronomy (miscellaneous)
business.industry
Thin-film transistor
General Engineering
General Physics and Astronomy
Optoelectronics
Bending
business
Oxide thin-film transistor
Stability (probability)
Threshold voltage

Details

ISSN :
13474065 and 00214922
Volume :
59
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........05c638c4dfd46fb8082b779270cbbd72
Full Text :
https://doi.org/10.35848/1347-4065/abb250
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