Coulomb-blockade-structures in poly-crystalline silicon

We have defined Coulomb blockade structures in a highly doped poly-crystalline film on top of a SiO 2 layer using electron beam lithography and thermal oxidation. The electrical characterization at 4.2 K revealed a 8 mV wide Coulomb blockade region. The Coulomb blockade can be lifted periodically by applying a voltage to the side as well as the back gate. We conclude that these effects are due to a single electrically active island, which can be directly linked to our lithographically defined structure.