Enhanced light output of GaN-based light emitting diodes with self-assembled ZnO nanorod arrays

In this study, we have fabricated an integrated ZnO nanorods/GaN‐based light emitting diode (LED) to achieve enhanced light emission efficiency. By a hydrothermal method assisted by pre‐formed ZnO nanodots, ZnO nanorod arrays were successfully grown on GaN LED under 50 mM zinc acetate di‐hydrate for 60 min at 150 °C. As a result, we observed vertically aligned ZnO nanorod arrays on GaN LED by scanning electron microscopy. The diameter and length of the nanorods were formed 40 to 60 nm and ∼300 nm, respectively. Compared to conventional GaN LEDs, enhanced light output of GaN LEDs with the ZnO nanorod arrays was observed.