Electrical Properties of MFIS-and MFMIS-FETs Using Ferroelectric SrBi2Ta2O9 Film and SrTa2O6/SiON Buffer Layer

Authors :: Hiroshi Ishiwara
Eisuke Tokumitsu
Gen Fujii
Source :: Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials.
Publication Year :: 1999
Publisher :: The Japan Society of Applied Physics, 1999.

Subjects :: Materials science
business.industry
Optoelectronics
business
Ferroelectricity
Layer (electronics)
Buffer (optical fiber)

Database :: OpenAIRE
Journal :: Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........052b9dbb64f578ae98de3c6f43f1da9c

Tools