One-Dimensional Transport through Two Subbands in Silicon Junctionless Nanowire Transistors

We experimentally investigate the one-dimensional transport through two subbands in silicon junctionless nanowire transistors. The drain-voltage dependent properties of one-dimensional transport was discussed in detail. The quantized drain current and peak-like transconductance can be identified at low drain voltage, resulting from the filling of discrete subbands. At high drain voltage, the drain current exhibits linear relationship with the gate voltage at each current-carrying mode. Moreover, the transconductance vs. gate voltage displays step-like shapes.