Electron Trapping in Ultrathin SiO/sub 2/ on Si[001] Probed by Electric-Field-Induced Second-Harmonic

Authors :: N. H. Tolk
Gunter Lüpke
W. Wang
L. C. Feldman
I. C. Kiziyalli
Source :: Nonlinear Optics '98. Materials, Fundamentals and Applications Topical Meeting (Cat. No.98CH36244).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: Electric-field-induced second-harmonic generation (EFISHG) allows the direct observation of charge trapping at near-interface oxide defects, which alters the reflected second-harmonic (SH) signal due to a change of the band-bending in the silicon space-charge region (SCR) at the interface.

Subjects :: Materials science
Silicon
business.industry
Oxide
chemistry.chemical_element
Resonance
Trapping
Space charge
chemistry.chemical_compound
Band bending
chemistry
Electric field
Optoelectronics
Absorption (electromagnetic radiation)
business

Database :: OpenAIRE
Journal :: Nonlinear Optics '98. Materials, Fundamentals and Applications Topical Meeting (Cat. No.98CH36244)
Accession number :: edsair.doi...........04ccf2ad09f079025a8a11bdab03acfa
Full Text :: https://doi.org/10.1109/nlo.1998.710192

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