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Positron annihilation spectroscopy of vacancy type defects in submicrocrystalline copper under annealing
- Source :
- AIP Conference Proceedings.
- Publication Year :
- 2016
- Publisher :
- Author(s), 2016.
-
Abstract
- The annealing of submicrocrystalline copper produced by the equal channel angular pressing followed by rolling was studied using positron annihilation and XRD analysis. In as-prepared samples, positrons are trapped at vacancies, concentration of which is very high (∼1.6 × 10−4) and dislocation type defects; however, a few percent of positrons annihilate from a free state. Increasing annealing temperature leads to the formation of vacancy complexes. The main positron trap centers in the temperature range ΔT = 20–300°C are vacancies and their small complexes of two or three vacancies. The dominant centers of positron trapping in the temperature range ΔT = 300–670°C are dislocation-type defects.
- Subjects :
- Materials science
Annealing (metallurgy)
chemistry.chemical_element
Atmospheric temperature range
Positron trapping
Molecular physics
Copper
Positron annihilation spectroscopy
Condensed Matter::Materials Science
Positron
chemistry
Vacancy defect
Physics::Accelerator Physics
Atomic physics
Positron annihilation
Subjects
Details
- ISSN :
- 0094243X
- Database :
- OpenAIRE
- Journal :
- AIP Conference Proceedings
- Accession number :
- edsair.doi...........04a1dc09e26c61ddd9f4a13225248713