Back to Search Start Over

Gain Performance of GeSn based n-p-n Heterojunction Phototransistor

Authors :
Rikmantra Basu
Guo-En Chang
Ankit Kumar Pandey
Source :
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.

Subjects

Subjects :
010302 applied physics
Materials science
Silicon
business.industry
Doping
chemistry.chemical_element
Heterojunction
02 engineering and technology
01 natural sciences
020210 optoelectronics & photonics
chemistry
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Heterojunction phototransistor
Optoelectronics
Absorption (electromagnetic radiation)
business
Photonic crystal

Details

Database :
OpenAIRE
Journal :
2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Accession number :
edsair.doi...........0466eb6af581d6994aec993e58585c49
Full Text :
https://doi.org/10.1109/nusod.2018.8570239
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details