High accuracy equivalent circuit model for GaN GIT bi‐directional switch

The simple and high-accuracy equivalent circuit model for GaN-GIT bi-directional switch have been constructed by eliminating the gate resistance dependence from the capacitance parameters and employing the parallel gate resistance circuit with the diode. By the new methods, the calculated waveforms, switching losses and switching times agree well with the experimental ones, and the accuracy between the calculations and the experiments are more than 90%. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)