Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications

MLA

Bruno Gérard, et al. “Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications.” 2019 Compound Semiconductor Week (CSW), May 2019. EBSCOhost, https://doi.org/10.1109/iciprm.2019.8819110.

APA

Bruno Gérard, Valdas Pasiskevicius, Fredrik Laurell, Giriprasanth Omanakuttan, Tajkia Syeed Tofa, Axel Strömberg, Pooja Vardhini Natesan, Hoon Jang, Yan-Ting Sun, A. Grisard, & Sebastian Lourdudoss. (2019). Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications. 2019 Compound Semiconductor Week (CSW). https://doi.org/10.1109/iciprm.2019.8819110

Chicago

Bruno Gérard, Valdas Pasiskevicius, Fredrik Laurell, Giriprasanth Omanakuttan, Tajkia Syeed Tofa, Axel Strömberg, Pooja Vardhini Natesan, et al. 2019. “Direct Heteroepitaxy of Orientation-Patterned GaP on GaAs by Hydride Vapour Phase Epitaxy for Quasi-Phase-Matching Applications.” 2019 Compound Semiconductor Week (CSW), May. doi:10.1109/iciprm.2019.8819110.