Growth of Patterned SiC by Ion Modification and Annealing of C60 Films on Silicon

Irradiation of vapor-deposited C60 films with a KeV ion beam (Ar+ or Ga+) transforms the surface layer of C60 into a non-volatile carbon film. During the subsequent annealing at 900°C, the modified C60 layer confines the underlying C60 on the silicon surface, allowing the formation of SiC. With this method, patterned SiC structures on silicon with the high lateral resolution possible with ion beams are fabricated