Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride

MLA

Kenichiro Sonoda, et al. “Electron Trap Level of Hydrogen Incorporated Nitrogen Vacancies in Silicon Nitride.” Journal of Applied Physics, vol. 117, Mar. 2015, p. 104501. EBSCOhost, https://doi.org/10.1063/1.4914163.

APA

Kenichiro Sonoda, Motoaki Tanizawa, Yasuo Yamaguchi, & Eiji Tsukuda. (2015). Electron trap level of hydrogen incorporated nitrogen vacancies in silicon nitride. Journal of Applied Physics, 117, 104501. https://doi.org/10.1063/1.4914163

Chicago

Kenichiro Sonoda, Motoaki Tanizawa, Yasuo Yamaguchi, and Eiji Tsukuda. 2015. “Electron Trap Level of Hydrogen Incorporated Nitrogen Vacancies in Silicon Nitride.” Journal of Applied Physics 117 (March): 104501. doi:10.1063/1.4914163.