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Application of chemical preferential etching on fabrication of epitaxial silicon detectors

Authors :
K. Husimi
Y. Fuchi
S. Osada
S. Watanabe
S. Ohkawa
Source :
Nuclear Instruments and Methods. 144:353-354
Publication Year :
1977
Publisher :
Elsevier BV, 1977.

Abstract

A chemical etching technique is applied to the fabrication of a thin silicon detector with a uniform thickness. The chemical etching has many advantages compared with the electrochemical etching, although good crystals which have high resistivity silicon layers epitaxially grown on heavily doped substrates are required for this purpose.

Details

ISSN :
0029554X
Volume :
144
Database :
OpenAIRE
Journal :
Nuclear Instruments and Methods
Accession number :
edsair.doi...........02f29247511c17b7d4c3a46d38210aac