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Application of chemical preferential etching on fabrication of epitaxial silicon detectors
- Source :
- Nuclear Instruments and Methods. 144:353-354
- Publication Year :
- 1977
- Publisher :
- Elsevier BV, 1977.
-
Abstract
- A chemical etching technique is applied to the fabrication of a thin silicon detector with a uniform thickness. The chemical etching has many advantages compared with the electrochemical etching, although good crystals which have high resistivity silicon layers epitaxially grown on heavily doped substrates are required for this purpose.
Details
- ISSN :
- 0029554X
- Volume :
- 144
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods
- Accession number :
- edsair.doi...........02f29247511c17b7d4c3a46d38210aac