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GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy

Authors :
P.Y. Lee
Wei-Chen Yang
K. C. Hsieh
Keh-Yung Cheng
Hsin-Ying Tseng
Kai-Yuan Cheng
Cheng-Wei Lin
C.-H. Hsu
Source :
Applied Physics Letters. 109:082102
Publication Year :
2016
Publisher :
AIP Publishing, 2016.

Abstract

GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.

Details

ISSN :
10773118 and 00036951
Volume :
109
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........02b8c05532d759013ec34be3daf51e48