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GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy
- Source :
- Applied Physics Letters. 109:082102
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Schottky barrier
Wide-bandgap semiconductor
Schottky diode
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Single crystal
Diode
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 109
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........02b8c05532d759013ec34be3daf51e48