Back to Search
Start Over
Annealing of Room Temperature Implants of Indium in Silicon
- Source :
- Ion Implantation in Semiconductors 1976 ISBN: 9781461341987
- Publication Year :
- 1977
- Publisher :
- Springer US, 1977.
-
Abstract
- The implantation and annealing of the heavy group III p-type dopants in silicon (Ga,In,TL) has received much less attention than boron. However these dopants have a number of specialized applications, and the recent use of indium implantation for high value resistors (l) was part of the motivation for this study.
Details
- ISBN :
- 978-1-4613-4198-7
- ISBNs :
- 9781461341987
- Database :
- OpenAIRE
- Journal :
- Ion Implantation in Semiconductors 1976 ISBN: 9781461341987
- Accession number :
- edsair.doi...........02ae012fa4951c98592f0437969dd582
- Full Text :
- https://doi.org/10.1007/978-1-4613-4196-3_3