Elimination of thermally induced biaxial stress in GaAs on Si layers by post‐growth patterning

The biaxial tensile stress of 2.65 kbar in as‐grown GaAs/Si is reduced by post‐growth patterning of the GaAs and the reduction in stress is dependent on the pattern size and shape. For stripe patterns less than 15 μm wide the stress becomes largely uniaxial with stress relief normal to the stripe direction. Rectangular patterns exhibited stress relief in orthogonal directions, and have the lowest stress in the narrow direction of the rectangle. A 9×12 μm2 rectangle exhibited an average stress of 0.5 kbar.