MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content

MLA

Mikiyasu Tanaka, et al. “MOVPE Growth of InAlN/InGaN Heterostructures with an Intermediate Range of In Content.” Journal of Crystal Growth, vol. 318, Mar. 2011, pp. 505–08. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2010.12.025.

APA

Mikiyasu Tanaka, Akihiro Hashimoto, Ashraful G. Bhuiyan, K. Sugita, K. Sasamoto, & Akio Yamamoto. (2011). MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content. Journal of Crystal Growth, 318, 505–508. https://doi.org/10.1016/j.jcrysgro.2010.12.025

Chicago

Mikiyasu Tanaka, Akihiro Hashimoto, Ashraful G. Bhuiyan, K. Sugita, K. Sasamoto, and Akio Yamamoto. 2011. “MOVPE Growth of InAlN/InGaN Heterostructures with an Intermediate Range of In Content.” Journal of Crystal Growth 318 (March): 505–8. doi:10.1016/j.jcrysgro.2010.12.025.