MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content

The InGaN and InAlN alloys with band gap energy in the range 0.65-6.2 eV have attracted a lot of attention for a variety of heterostructures providing great freedom in choosing device structures for the desired device operation. This paper reports the MOVPE growth of InAIN and InGaN alloys and their heterostructures with an intermediate In content (In: 0.4―0.6). InAIN films of In content of 0.59-1 have been successfully obtained without phase separation, In droplet formation and adduct formation. The adduct formation has been investigated through the parasitic reaction of TMA, TMI and NH 3 . On the basis of these results, successful MOVPE growth of InAIN/InGaN heterostructure with the suppression of metallic In droplets formation on the surface has been obtained. On the other hand, In droplets were observed on the surface of InGaN/InAIN heterostructure due to the deterioration of InAIN film during the growth of InGaN. These results give important indications toward the fabrication of future devices using InAlN/InGaN heterostructures like LEDs, LDs and solar cells.