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Impact of SiC MOSFET on PV Inverter

Authors :
Ning He
Wenxing Zhong
Seiki Igarashi
Tatsuhiko Fujihira
Dehong Xu
Yuying Wu
Junxiong Wu
Source :
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

This paper investigates the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET. Static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET and Si IGBT are compared. The efficiency performance of planar gate SiC MOSFET inverter, trench gate SiC MOSFET inverter and Si IGBT inverter are estimated and compared with increased switching frequency. Finally, these results are verified with 10 kW inverter prototypes.

Subjects

Subjects :
010302 applied physics
Materials science
business.industry
020208 electrical & electronic engineering
Electrical engineering
Switching frequency
02 engineering and technology
Insulated-gate bipolar transistor
01 natural sciences
Planar
0103 physical sciences
MOSFET
0202 electrical engineering, electronic engineering, information engineering
Inverter
Igbt inverter
business
Power density
Trench gate

Details

Database :
OpenAIRE
Journal :
2018 IEEE Energy Conversion Congress and Exposition (ECCE)
Accession number :
edsair.doi...........020b0330367a8cfdb1ed82d9ac6e97b8
Full Text :
https://doi.org/10.1109/ecce.2018.8558284
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