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Oxygen pressure dependence of HfO2 stoichiometry: An ab initio investigation

Authors :
Rampi Ramprasad
C. Tang
Source :
Applied Physics Letters. 91:022904
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

The oxygen pressure dependence of the formation of excess O vacancies and interstitials in monoclinic HfO2 was investigated by performing first principles and thermodynamic calculations. Upper and lower critical oxygen pressures are identified that heavily favor the formation of oxygen interstitials and vacancies, respectively. The ratio of these critical pressures can be specified unambiguously as the sum of the formation energies of O vacancies and interstitials at 0K obtained from ab initio calculations.

Details

ISSN :
10773118 and 00036951
Volume :
91
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........01f596c0d83975ae6bf3bc17accd2b72
Full Text :
https://doi.org/10.1063/1.2756107