Properties of MBE-Grown ZnBeSe: Study of Be Isoelectronic Traps and of Dopant Behavior

In this paper we present studies on undoped, Cl-doped, and N-doped ZnBeSe using photoluminescence (PL). We show that the dominant PL from undoped samples is effective mass type and suggest that it is of isoelectronic origin. We also show that the binding energy of both donor and acceptor impurities increases with Be concentration.