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Strain of GaAs/GaAsP Superlattices Used as Spin-Polarized Electron Photocathodes, Determined by X-Ray Diffraction
- Source :
- e-Journal of Surface Science and Nanotechnology. 8:125-130
- Publication Year :
- 2010
- Publisher :
- Surface Science Society Japan, 2010.
-
Abstract
- The strains in GaAs/GaAsP superlattices used in spin-polarized photocathodes grown on GaAs and GaP (001) substrates were determined by X-ray diffraction. The thicknesses of the GaAs wells and GaAsP barrier layers were also determined. The band structures of the superlattices were calculated on the basis of these experimentally determined strains and layer thicknesses. The thicknesses and band structures were in good agreement with those observed by transmission electron microscopy and photoluminescence, respectively. The strains induced in the GaAs well layers were approximately linearly dependent upon the phosphorous fraction in the GaAsP layer, and the splitting between the heavy hole band and the light hole band of the superlattices grown on GaP substrates was larger than that of superlattices grown on GaAs substrates. In photocathodes grown on GaP substrates, low polarizations were observed, not due to a lack of band splitting, but to depolarization scattering caused by crystal defects, which were different from that induced in superlattices grown on GaAs substrates. [DOI: 10.1380/ejssnt.2010.125]
- Subjects :
- congenital, hereditary, and neonatal diseases and abnormalities
Materials science
Photoluminescence
Spin polarization
Condensed Matter::Other
business.industry
Scattering
Superlattice
nutritional and metabolic diseases
Bioengineering
Surfaces and Interfaces
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Crystallographic defect
Surfaces, Coatings and Films
Gallium arsenide
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Mechanics of Materials
Transmission electron microscopy
X-ray crystallography
Optoelectronics
business
Biotechnology
Subjects
Details
- ISSN :
- 13480391
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- e-Journal of Surface Science and Nanotechnology
- Accession number :
- edsair.doi...........01bd580dfd1fe4c37b30b708f4708a43