A novel quantum laser structure based on InAsN/GaSb system

A new class of dilute-nitride laser structure to be grown on InAs substrate is simulated for room temperature emission near 3.3 µm. The active region is composed of several strain-compensated type-II InAsN/GaSb/InAsN quantum wells having the “W” geometry so as to maximized the electron and hole wavefunctions overlap. Optical gain calculations at 300 K show high material gain values, of the order of 1000 cm–1 with injected carrier density of 1 × 1012 cm–2. Radiative current density inferior to 100 A/cm2 is predicted for room temperature operation. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)