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On the nature of the radiation defects with level Ec–0.22 eV in n-type silicon
- Source :
- Radiation Effects. 87:147-154
- Publication Year :
- 1985
- Publisher :
- Informa UK Limited, 1985.
-
Abstract
- Radiation-induced accumulation and annealing processes of radiation defects with level Ec–0,22 eV in silicon of various perfection are analysed and it is concluded that they consist of oxygen and two vacancies (oxygen-divacancy complex).
Details
- ISSN :
- 00337579
- Volume :
- 87
- Database :
- OpenAIRE
- Journal :
- Radiation Effects
- Accession number :
- edsair.doi...........01aa55fb703341e9deedb6db5237e4c3
- Full Text :
- https://doi.org/10.1080/01422448608209715