Optimization of Sige Selective Epitaxial Growth for Advanced FDSOI Technology

FDSOIs with SiGe channel have drawn significant attention due to their advantages in uniaxial strain, higher mobility and better reliability over conventional Si channel MOSFETs. Fabrication of the SiGe channel is based on selective epitaxial growth of low Ge fraction SiGe layer as well as the subsequent high-temperature oxidation of this layer on SOI substrate. It is found that the edge profile of epitaxial SiGe layer on SOI have strong impact on the terminal channel morphology. By optimizing the process of epitaxial SiGe layers, the SiGe channel with flat profile is demonstrated after oxidation process.