Charge sharing in multi-electrode devices for deterministic doping studied by IBIC

Following a single ion strike in a semiconductor device the induced charge distribution changes rapidly with time and space. This phenomenon has important applications to the sensing of ionizing radiation with applications as diverse as deterministic doping in semiconductor devices to radiation dosimetry. We have developed a new method for the investigation of this phenomenon by using a nuclear microprobe and the technique of Ion Beam Induced Charge (IBIC) applied to a specially configured sub-100 μm scale silicon device fitted with two independent surface electrodes coupled to independent data acquisition systems. The separation between the electrodes is comparable to the range of the 2 MeV He ions used in our experiments. This system allows us to integrate the total charge induced in the device by summing the signals from the independent electrodes and to measure the sharing of charge between the electrodes as a function of the ion strike location as a nuclear microprobe beam is scanned over the sensitive region of the device. It was found that for a given ion strike location the charge sharing between the electrodes allowed the beam-strike location to be determined to higher precision than the probe resolution. This result has potential application to the development of a deterministic doping technique where counted ion implantation is used to fabricate devices that exploit the quantum mechanical attributes of the implanted ions.