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Significance of the channeling surface peak in thin‐film analysis
- Source :
- Applied Physics Letters. 32:93-94
- Publication Year :
- 1978
- Publisher :
- AIP Publishing, 1978.
-
Abstract
- The surface scattering of MeV He+ ions channeled along Si〈100〉 from clean well‐characterized Si(100) surfaces is measured. The surface peak intensity, along with other values in the literature, is shown to obey simple scaling laws. For the study of very thin films by backscattering the contribution made by this surface scattering can be important.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........00cabf2d483d2fae358265b6349869c2