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Generation and inhibition of domain movement in semi‐insulating GaAs:Cr
- Source :
- Applied Physics Letters. 65:353-355
- Publication Year :
- 1994
- Publisher :
- AIP Publishing, 1994.
-
Abstract
- Electric‐field domains in semi‐insulating GaAs:Cr are investigated both by imaging the locally induced birefringence using a transverse electro‐optic configuration and by measuring the dc current flowing through the crystal. It is shown that the formation of domains may be controlled by optical means.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 65
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........00ca8b141665db89ae9c6e04a2dc5a4d