The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO2 matrix

The principles of control of the luminescent properties of the Si + (150 keV) ion-synthesized system, composed of silicon nanoinclusions in a SiO 2 matrix, are considered. The influence of the ion dose, annealing regime and additional doping with phosphorus is investigated. It is shown that the intensity of the red/infrared photoluminescence peak (at ∼800 nm) non-monotonously changes with the dose. The optimum dose is shifted to smaller values with increasing annealing temperature (from 1000 to 1100 °C for an annealing time of 2 h). The highest intensity reached by the dose variation is nearly the same for both temperatures. Phosphorus doping increases the luminescence intensity for 1000°C, the effect of doping is lower for higher Si + doses. The physical nature of the features observed is discussed.