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Etching selectivity of indium tin oxide to photoresist in high density chlorine- and ethylene-containing plasmas

Authors :
Shaun Berry
Steven A. Vitale
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:021210
Publication Year :
2013
Publisher :
American Vacuum Society, 2013.

Abstract

Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the photoresist etches spontaneously in chlorine plasmas. The ITO:photoresist selectivity increases with BCl3 addition, ion bombardment energy, and C2H4 addition. It is proposed that the ITO etching rate is limited by desorption of InClx products, and that ethylene addition assists in scavenging oxygen from ITO leaving loosely bound In, which is more easily removed by physical sputtering.

Details

ISSN :
21662754 and 21662746
Volume :
31
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........00aad1355d9dcd8f0208902789d1f711