Back to Search
Start Over
Etching selectivity of indium tin oxide to photoresist in high density chlorine- and ethylene-containing plasmas
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:021210
- Publication Year :
- 2013
- Publisher :
- American Vacuum Society, 2013.
-
Abstract
- Etching of indium tin oxide (ITO) thin films in high density chlorine plasmas is studied, with the goal of increasing the etching selectivity to photoresist. The ITO etching rate increases with ethylene addition, but is not affected by BCl3 addition. ITO exhibits a threshold energy for ion etching, whereas the photoresist etches spontaneously in chlorine plasmas. The ITO:photoresist selectivity increases with BCl3 addition, ion bombardment energy, and C2H4 addition. It is proposed that the ITO etching rate is limited by desorption of InClx products, and that ethylene addition assists in scavenging oxygen from ITO leaving loosely bound In, which is more easily removed by physical sputtering.
- Subjects :
- Materials science
Process Chemistry and Technology
fungi
Inorganic chemistry
technology, industry, and agriculture
macromolecular substances
Photoresist
digestive system
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ion
Indium tin oxide
stomatognathic system
Sputtering
Etching (microfabrication)
Materials Chemistry
Dry etching
Electrical and Electronic Engineering
Reactive-ion etching
Thin film
Instrumentation
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........00aad1355d9dcd8f0208902789d1f711