Raman Scattering Characterization of Ion-Beam Synthesized Mg2Si, 1

The unpolarized Raman scattering spectra of ion beam synthesized Mg 2 Si phase, embedded in (100) Si matrix are studied. We used two different doses for the Mg ions, 4 × 10 17 cm -2 and 8 × 10 17 cm -2 , each of them with two different energies 40 keV and 60 keV, which were implanted into (100) Si substrates. After implantation, the samples were subjected to rapid thermal annealing for different durations. The samples' surfaces were studied by scanning electron microscopy (SEM). On the basis of the Roman spectra behavior, conclusions were drawn about the influence of the technological parameters on the formation of the Mg 2 Si phase.