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Concentration of point defects in growing CZ silicon crystal under the internal stresses: effects of impurity doping and thermal stress
- Source :
- Physica B: Condensed Matter. :493-496
- Publication Year :
- 1999
- Publisher :
- Elsevier BV, 1999.
-
Abstract
- Behavior of point defects under the internal stress in a growing Czochralski (CZ) silicon is theoretically examined. The changes of point defect concentration by the impurity doping and by the thermal stress are quantitatively estimated. Contributions of them to the formation of secondary defects are discussed.
- Subjects :
- Materials science
Silicon
Condensed matter physics
education
technology, industry, and agriculture
chemistry.chemical_element
Condensed Matter Physics
Crystallographic defect
Electronic, Optical and Magnetic Materials
Cz silicon
Crystal
chemistry
Electrical and Electronic Engineering
Impurity doping
Internal stress
Subjects
Details
- ISSN :
- 09214526
- Database :
- OpenAIRE
- Journal :
- Physica B: Condensed Matter
- Accession number :
- edsair.doi...........007c4adfd1505358f7ec4d49e712785c