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Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes
- Source :
- Semiconductor Science and Technology. 35:075021
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi...........005413f60cc41af910bfb1237bc608af
- Full Text :
- https://doi.org/10.1088/1361-6641/ab8c2a