Growth, Behavior, and Applications of Strained InGaAs/GaAs Multiple Quantum well Based Asymmetric Fabry-Perot Reflection Modulators

Authors :: Li Chen
K. C. Rajkumar
K. Kaviani
Anupam Madhukar
Q. Xie
Ping Chen
Kezhong Hu
Source :: MRS Proceedings. 240
Publication Year :: 1991
Publisher :: Springer Science and Business Media LLC, 1991.
Abstract: We report the realization of all-optical photonic switches using strained InGaAs/GaAs multiple quantum well based inverted cavity asymmetric Fabry-Perot reflection modulators monolithically integrated with GaAs/AlGaAs based heterojunction phototransistors. The photonic switches show both bistable and non-bistable switching behavior with a contrast ratio of 12:1 and optical gain of 2 to 4 dB. The design and growth considerations for such an integrated structure are also discussed.

Subjects :: Materials science
Bistability
business.industry
Multiple quantum
Physics::Optics
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Reflection (mathematics)
Optoelectronics
Contrast ratio
Photonics
business
Realization (systems)
Fabry–Pérot interferometer

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