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High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α‐In 2 Se 3
- Source :
- physica status solidi (a). 217:1900932
- Publication Year :
- 2020
- Publisher :
- Wiley, 2020.
-
Abstract
- Herein, device demonstration based on vertical transport in multilayer I±-In2Se3 is reported. Photodetectors realized using a metal/I±-In2Se3/indium tin oxide (ITO) vertical junction exhibit clear signature of the band edge in spectral responsivity. The wavelength at 680 nm corresponding to an ultrahigh responsivity of 1000 A Wâ��1 and a detectivity of >1013 cm Hz0.5 Wâ��1 at a bias of 0.5 V. The variation of responsivity and detectivity with optical power density is studied, and a transient response of 20 ms is obtained for the devices (instrument limitation). In addition, an asymmetric barrier height arising out of ITO and Au contacts to a vertical I±-In2Se3 junction resulted in a photovoltaic effect with VOC â��0.1 V and ISC â��0.4 I¼A under an illumination of 520 nm.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Spectral responsivity
Photodetector
Optical power
02 engineering and technology
Surfaces and Interfaces
Photovoltaic effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Indium tin oxide
Responsivity
Wavelength
0103 physical sciences
Materials Chemistry
Optoelectronics
Transient response
Electrical and Electronic Engineering
0210 nano-technology
business
Subjects
Details
- ISSN :
- 18626319 and 18626300
- Volume :
- 217
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi...........000625c2ef5cd0d32e9c0b2208e37eb5